Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces
- Univ. of Geneva (Switzerland)
- Paul Scherrer Inst. (PSI), Villigen (Switzerland); Brookhaven National Lab. (BNL), Upton, NY (United States)
- Canadian Light Source, Saskatoon, SK (Canada)
- Univ. of Geneva (Switzerland); Service de Physique de l’Etat Condensé (CNRS UMR 3680), Gif-sur-Yvette (France)
- Univ. of Geneva (Switzerland); Univ. College London (United Kingdom)
- Univ. of British Columbia, Vancouver, BC (Canada)
- Paul Scherrer Inst. (PSI), Villigen (Switzerland)
Bulk NdNiO3 and thin films grown along the pseudocubic (001)pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T = 200 K. Here, we show that for NdNiO3 films deposited on (111)pc NdGaO3, the MIT occurs at T = 335 K and the Néel transition at T = 230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)pc surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); European Research Council (ERC); CFI; Natural Sciences and Engineering Research Council of Canada (NSERC); USNRC; CIHR; Government of Saskatchewan; WD Canada; University of Saskatchewan
- Grant/Contract Number:
- SC00112704
- OSTI ID:
- 1229442
- Report Number(s):
- BNL-111518-2015-JA
- Journal Information:
- APL Materials, Vol. 3, Issue 6; ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 49 works
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