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Title: Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures

Authors:
; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1229339
Report Number(s):
BNL--111414-2015-JA
Journal ID: ISSN 1944-8244
DOE Contract Number:
SC00112704
Resource Type:
Journal Article
Resource Relation:
Journal Name: ACS Applied Materials and Interfaces; Journal Volume: 7; Journal Issue: 37
Publisher:
American Chemical Society
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English