High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors

Youn, H; Bak, S; Kim, M; Jaye, C; Fischer, D; Lee, C; Yang, X; Roh, K; Kim, K

doi:10.1002/cssc.201500122

Title: High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors

Journal Article · Mon Jun 08 00:00:00 EDT 2015 · ChemSusChem (Online)

DOI:https://doi.org/10.1002/cssc.201500122· OSTI ID:1229119

Youn, H; Bak, S; Kim, M; Jaye, C; Fischer, D; Lee, C; Yang, X; Roh, K; Kim, K

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: SC00112704

OSTI ID:: 1229119

Report Number(s):: BNL-111194-2015-JA

Journal Information:: ChemSusChem (Online), Vol. 8, Issue 11; ISSN 1864-564X

Publisher:: ChemPubSoc Europe

Country of Publication:: United States

Language:: English

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