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Title: Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1229098
Report Number(s):
BNL--111173-2015-JA
Journal ID: ISSN 1528-7483
DOE Contract Number:
SC00112704
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystal Growth and Design; Journal Volume: 13; Journal Issue: 8
Publisher:
American Chemical Society
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English