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Title: Compositional homogeneity and X-ray topographic analyses of CdTe xSe 1-x grown by the vertical Bridgman technique

We grew CdTe xSe 1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS’ X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTe xSe 1-x crystals. Here, we noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks.
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [1] ;  [1] ;  [3] ;  [3] ;  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Korea Univ., Seoul (Republic of Korea)
  3. Fisk Univ., Nashville, TN (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0022-0248
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Crystal Growth; Journal Volume: 411; Journal Issue: C
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
43 PARTICLE ACCELERATORS; A1. characterization; A1. defects; A1. Te-inclusions; A1. Subgrain boundary; B2. CdTeSe; B2. Semiconducting II-VI materials