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This content will become publicly available on July 8, 2016

Title: Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Authors:
; ORCiD logo ; ; ORCiD logo ; ORCiD logo ;
Publication Date:
OSTI Identifier:
1228331
Grant/Contract Number:
AC52-06NA25396
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 2; Related Information: CHORUS Timestamp: 2016-12-26 04:43:05; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English