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Title: Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.
Authors:
; ;
Publication Date:
OSTI Identifier:
1226805
Report Number(s):
9,196,846
14/687,059
DOE Contract Number:
AC02-05CH11231
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Apr 15
Research Org:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION