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Title: Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4926918· OSTI ID:1226778
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  1. Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
  2. Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

Sponsoring Organization:
USDOE
Grant/Contract Number:
ER 46940-DE-SC0010597
OSTI ID:
1226778
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 107 Journal Issue: 3; ISSN 0003-6951
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

References (25)

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics journal December 2012
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect journal November 2007
Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices journal May 2013
Van der Waals heterostructures journal July 2013
Cloning of Dirac fermions in graphene superlattices journal May 2013
Intercalation compounds of graphite journal January 2002
Raman Signature of Graphene Superlattices journal November 2011
Direct observation of a widely tunable bandgap in bilayer graphene journal June 2009
Raman Fingerprint of Aligned Graphene/h-BN Superlattices journal October 2013
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures journal September 2014
Reduction of Fermi velocity in folded graphene observed by resonance Raman spectroscopy journal June 2008
Massive Dirac Fermions and Hofstadter Butterfly in a van der Waals Heterostructure journal May 2013
Tunable fractional quantum Hall phases in bilayer graphene journal July 2014
Raman Spectroscopy Study of Rotated Double-Layer Graphene: Misorientation-Angle Dependence of Electronic Structure journal June 2012
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures journal February 2012
Commensurate–incommensurate transition in graphene on hexagonal boron nitride journal April 2014
Boron nitride substrates for high-quality graphene electronics journal August 2010
Raman Spectrum of Graphene and Graphene Layers journal October 2006
Imaging Stacking Order in Few-Layer Graphene journal January 2011
Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy journal January 2010
Broken-Symmetry States in Doubly Gated Suspended Bilayer Graphene journal October 2010
Raman spectroscopy in graphene journal April 2009
Raman spectra of misoriented bilayer graphene journal September 2008
Gate-induced insulating state in bilayer graphene devices journal December 2007
Emergence of superlattice Dirac points in graphene on hexagonal boron nitride journal March 2012

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