skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Epitaxial Cu2ZnSnS4 thin film on Si (111) 4° substrate

Authors:
 [1];  [2];  [1];  [2];  [3];  [2];  [2];  [1];  [1];  [1]
  1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia
  2. National Renewable Energy Laboratory, Golden, Colorado 80403, USA
  3. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1226761
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 106 Journal Issue: 25; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Song, Ning, Young, Matthew, Liu, Fangyang, Erslev, Pete, Wilson, Samual, Harvey, Steven P., Teeter, Glenn, Huang, Yidan, Hao, Xiaojing, and Green, Martin A. Epitaxial Cu2ZnSnS4 thin film on Si (111) 4° substrate. United States: N. p., 2015. Web. doi:10.1063/1.4922992.
Song, Ning, Young, Matthew, Liu, Fangyang, Erslev, Pete, Wilson, Samual, Harvey, Steven P., Teeter, Glenn, Huang, Yidan, Hao, Xiaojing, & Green, Martin A. Epitaxial Cu2ZnSnS4 thin film on Si (111) 4° substrate. United States. https://doi.org/10.1063/1.4922992
Song, Ning, Young, Matthew, Liu, Fangyang, Erslev, Pete, Wilson, Samual, Harvey, Steven P., Teeter, Glenn, Huang, Yidan, Hao, Xiaojing, and Green, Martin A. 2015. "Epitaxial Cu2ZnSnS4 thin film on Si (111) 4° substrate". United States. https://doi.org/10.1063/1.4922992.
@article{osti_1226761,
title = {Epitaxial Cu2ZnSnS4 thin film on Si (111) 4° substrate},
author = {Song, Ning and Young, Matthew and Liu, Fangyang and Erslev, Pete and Wilson, Samual and Harvey, Steven P. and Teeter, Glenn and Huang, Yidan and Hao, Xiaojing and Green, Martin A.},
abstractNote = {},
doi = {10.1063/1.4922992},
url = {https://www.osti.gov/biblio/1226761}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 106,
place = {United States},
year = {Mon Jun 22 00:00:00 EDT 2015},
month = {Mon Jun 22 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at https://doi.org/10.1063/1.4922992

Citation Metrics:
Cited by: 38 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell
journal, November 2014


A low-temperature order-disorder transition in Cu 2 ZnSnS 4 thin films
journal, January 2014


Electronic structure of GaN stacking faults
journal, August 1997


Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation
journal, April 2014


Low-cost fabrication of Cu2ZnSnS4 thin films for solar cell absorber layers
journal, July 2012


The path to 25% silicon solar cell efficiency: History of silicon cell evolution
journal, May 2009


Effect of microgravity on the crystallization of a self-assembling layered material
journal, August 1997


Direct growth of heteroepitaxial CuInSe2 on GaN (0001) by molecular beam epitaxy
journal, January 2015


Overview on SiN surface passivation of crystalline silicon solar cells
journal, January 2001


A thin-film solar cell of high-quality -FeSi/Si heterojunction prepared by sputtering
journal, February 2006


40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
journal, September 2008


Development of CZTS-based thin film solar cells
journal, February 2009


Near-infrared photodetection of β-FeSi 2 /Si heterojunction photodiodes at low temperatures
journal, January 2013


Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics
journal, March 2013


Multiwavelength excitation Raman scattering study of polycrystalline kesterite Cu 2 ZnSnS 4 thin films
journal, January 2014


Structure of extended defects in epitaxial CuInS 2 /Si(111)
journal, February 2000


Preparation and Properties of Cu 2 ZnSnS 4 Absorber and Cu 2 ZnSnS 4 /Amorphous Silicon Thin-Film Solar Cell
journal, June 2011


Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation
journal, December 2008


Fabrication and characterization of Al/Cu 2 ZnSnS 4 / n -Si/Al heterojunction photodiodes : Fabrication and characterization of Al/Cu
journal, November 2013


Polymorphism and structural defects in Li2FeSiO4
journal, January 2010


Solar cell efficiency tables (Version 45): Solar cell efficiency tables
journal, December 2014


Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961


Generation of degradation defects, stacking faults, and misfit dislocations in ZnSe-based films grown on GaAs
journal, July 1995


Element substitution from substrates in Bi 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 overlayers deposited by hot wall epitaxy
journal, August 2014


Structural, thermodynamical and optical properties of Cu2-II-IV-VI4 quaternary compounds
journal, April 2005


Growth and Raman scattering characterization of Cu2ZnSnS4 thin films
journal, February 2009


Characteristics of In-Substituted CZTS Thin Film and Bifacial Solar Cell
journal, November 2014