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Title: Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4922274· OSTI ID:1226752

Sponsoring Organization:
USDOE
Grant/Contract Number:
EEC-1041895
OSTI ID:
1226752
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 106 Journal Issue: 22; ISSN 0003-6951
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 25 works
Citation information provided by
Web of Science

References (22)

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All-optical switching due to state filling in quantum dots journal May 2004
The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept journal January 2010
Self‐organized growth of regular nanometer‐scale InAs dots on GaAs journal January 1994
Height-controlled InAs quantum dots by using a thin InGaAs layer journal June 2002
Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping journal June 2013
Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots journal June 2003
Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design journal December 2008
Carrier thermal escape and retrapping in self-assembled quantum dots journal September 1999
Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots journal May 2003
Strain relaxation in Fe 3 (Al,Si)/GaAs: An x‐ray scattering study journal March 1996
Carrier dynamics in submonolayer InGaAs∕GaAs quantum dots journal July 2006
Submonolayer quantum dot infrared photodetector journal March 2009
Size-Dependent Tunneling and Optical Spectroscopy of CdSe Quantum Rods journal July 2002
Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics journal March 1999
General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence journal July 2004
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction journal January 1994
Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots journal November 2014
Self-Assembly of Two-Dimensional Islands via Strain-Mediated Coarsening journal August 2001
Analysis of InAs/GaAs quantum dot solar cells using Suns- V oc measurements journal November 2014
Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors journal January 2013
Emitter degradation in quantum dot intermediate band solar cells journal June 2007

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