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This content will become publicly available on May 19, 2016

Title: Time constant of defect relaxation in ion-irradiated 3 C -SiC

Authors:
; ; ;
Publication Date:
OSTI Identifier:
1226744
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 20; Related Information: CHORUS Timestamp: 2016-12-29 08:52:25; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English