Evolution of GaAs nanowire geometry in selective area epitaxy

Bassett, Kevin P.; Mohseni, Parsian K.; Li, Xiuling

doi:10.1063/1.4916347

Title: Evolution of GaAs nanowire geometry in selective area epitaxy

Journal Article · Tue Mar 31 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4916347· OSTI ID:1226729

Bassett, Kevin P. ^[1]; Mohseni, Parsian K. ^[1]; Li, Xiuling ^[1]

Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, International Institute for Carbon-Neutral Energy Research (I2CNER), University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DMR #1006581

OSTI ID:: 1226729

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 106 Journal Issue: 13; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 25 works

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References (29)

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