Extended antisite defects in tetrahedrally bonded semiconductors
Journal Article
·
· Physical Review B
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1226674
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Vol. 92 Journal Issue: 20; ISSN 1098-0121
- Publisher:
- American Physical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 17 works
Citation information provided by
Web of Science
Web of Science
Similar Records
Extended Anti-Site Defects in Tetrahedrally Bonded Semiconductors
A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]
Ultralow Thermal Conductivity in Diamond-Like Semiconductors: Selective Scattering of Phonons from Antisite Defects
Journal Article
·
Sun Nov 15 00:00:00 EST 2015
· Physical Review B
·
OSTI ID:1226674
A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]
Journal Article
·
Thu Nov 10 00:00:00 EST 2016
· Semiconductor Science and Technology
·
OSTI ID:1226674
+2 more
Ultralow Thermal Conductivity in Diamond-Like Semiconductors: Selective Scattering of Phonons from Antisite Defects
Journal Article
·
Wed May 02 00:00:00 EDT 2018
· Chemistry of Materials
·
OSTI ID:1226674
+8 more