Twin superlattice-induced large surface recombination velocity in GaAs nanostructures

Sheng, Chunyang; Brown, Evan; Shimojo, Fuyuki; Nakano, Aiichiro

doi:10.1063/1.4903487

Title: Twin superlattice-induced large surface recombination velocity in GaAs nanostructures

Journal Article · Mon Dec 08 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903487· OSTI ID:1369913

Sheng, Chunyang ^[1];

^[1]; Shimojo, Fuyuki ^[2]; Nakano, Aiichiro ^[1]

Univ. of Southern California, Los Angeles, CA (United States)
Univ. of Southern California, Los Angeles, CA (United States); Kumamoto Univ. (Japan)

Semiconductor nanowires (NWs) often contain a high density of twin defects that form a twin superlattice, but its effects on electronic properties are largely unknown. In this work, nonadiabatic quantum molecular dynamics simulation shows unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective charge-recombination centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and offers microscopic understanding of the underlying surface-recombination processes.

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Research Organization:: Univ. of Southern California, Los Angeles, CA (United States). Energy Frontier Research Center (EFRC) Center for Energy Nanoscience (CEN)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001013

OSTI ID:: 1369913

Alternate ID(s):: OSTI ID: 1226592

Journal Information:: Applied Physics Letters, Vol. 105, Issue 23; Related Information: CEN partners with University of Southern California (lead); University of Illinois, Urbana-Champaign; University of Michigan; University of Virginia; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 2 works

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