skip to main content

This content will become publicly available on December 5, 2015

Title: Dual-sensor technique for characterization of carrier lifetime decay transients in semiconductors

Authors:
; ORCiD logo ; ;
Publication Date:
OSTI Identifier:
1226587
Grant/Contract Number:
AC36-08-GO28308
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 21; Related Information: CHORUS Timestamp: 2016-12-21 04:22:50; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English