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Title: Dual-sensor technique for characterization of carrier lifetime decay transients in semiconductors

Authors:
; ; ;
Publication Date:
OSTI Identifier:
1226587
Grant/Contract Number:
AC36-08-GO28308
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 21; Related Information: CHORUS Timestamp: 2016-12-21 04:22:50; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English