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Title: Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4932374· OSTI ID:1225936
 [1];  [2];  [2];  [2];  [2];  [3];  [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Toledo, OH (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Univ. of Toledo, OH (United States)

The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. Here, to avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1225936
Report Number(s):
NREL/JA-5K00-63854
Journal Information:
Applied Physics Letters, Vol. 107, Issue 14; Related Information: Applied Physics Letters; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

References (23)

Solar cell efficiency tables (Version 45): Solar cell efficiency tables journal December 2014
Research strategies toward improving thin-film CdTe photovoltaic devices beyond 20% conversion efficiency journal December 2013
Molecular Beam Epitaxy book January 1996
Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces journal May 1987
Investigation of the evolution of single domain (111)B CdTe films by molecular beam epitaxy on miscut (001)Si substrate journal October 1998
Molecular‐beam epitaxy of Cd x Hg 1− x Te at D.LETI/LIR
  • Million, A.; Di Cioccio, L.; Gailliard, J. P.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 6, Issue 4 https://doi.org/10.1116/1.575607
journal July 1988
Kinetics of molecular‐beam epitaxial HgCdTe growth journal July 1988
The origins of twinning in cdTe journal May 1983
Atomic-Scale Characterization of II–VI Compound Semiconductors journal August 2013
Atomic and electronic structure of the CdTe(001) surface: LDA and GW calculations journal June 1999
Preparation and termination of well-defined CdTe(100) and Cd(Zn)Te(100) surfaces journal February 1997
Atomic structure of the CdTe(001) C (2×2) reconstructed surface: A grazing incidence x‐ray diffraction study journal December 1995
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Generalized Gradient Approximation Made Simple journal October 1996
Surface Energy and the Common Dangling Bond Rule for Semiconductors journal February 2004
ZnSe(100) surface: Atomic configurations, composition, and surface dipole journal April 1994
Stability and electronic structure of the low- Σ grain boundaries in CdTe: a density functional study journal January 2015
Structure and effects of double-positioning twin boundaries in CdTe journal September 2003
Characterization of extended defects in polycrystalline CdTe thin films grown by close-spaced sublimation journal June 2001
Energetics and effects of planar defects in CdTe journal October 2001
Atomic-resolution characterization of the effects of CdCl 2 treatment on poly-crystalline CdTe thin films journal August 2014
Creating a single twin boundary between two CdTe (111) wafers with controlled rotation angle by wafer bonding journal December 2013
Relationships between the band gaps of the zinc-blende and wurtzite modifications of semiconductors journal July 1994