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Title: Growth of Antiphase-Domain-Free GaP on Si Substrates by Metalorganic Chemical Vapor Deposition using an in situ AsH3 Surface Preparation

Authors:
; ; ; ; ;
Publication Date:
OSTI Identifier:
1225509
Report Number(s):
NREL/JA-5J00-64375
Journal ID: ISSN 0003-6951
DOE Contract Number:
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 8
Publisher:
American Institute of Physics (AIP)
Research Org:
NREL (National Renewable Energy Laboratory (NREL)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS III-V semiconductors; Epitaxy; Surface cleaning; Semiconductor growth; Metal organic chemical vapor deposition