Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

Haegel, N. M.; Christian, T.; Scandrett, C.; Norman, A. G.; Mascarenhas, A.; Misra, Pranob; Liu, Ting; Sukiasyan, Arsen; Pickett, Evan; Yuen, Homan

doi:10.1063/1.4902316

Title: Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

Journal Article · Fri Nov 21 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902316· OSTI ID:1224314

Haegel, N. M. ^[1]; Christian, T. ^[1]; Scandrett, C. ^[2]; Norman, A. G. ^[1]; Mascarenhas, A. ^[1]; Misra, Pranob ^[3]; Liu, Ting ^[3];

^[3]; Pickett, Evan ^[3]; Yuen, Homan ^[3]

National Renewable Energy Laboratory, Golden, Colorado 80401, USA
Naval Postgraduate School, Monterey, California 93943, USA
Solar Junction, Inc., San Jose, California 95131, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-06OR23100; DEAC36-08GO28308

OSTI ID:: 1224314

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 105 Journal Issue: 20; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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References (17)

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Electrical properties of silicon- and beryllium-doped GaInP and (AlGa)InP grown by solid source molecular beam epitaxy Sun, Z. Z.; Yoon, S. F.; Loke, W. K. Journal of Crystal Growth, Vol. 235, Issue 1-4 https://doi.org/10.1016/S0022-0248(01)01743-2	journal	February 2002
Observation of weak ordering effects and surface morphology study of InGaP grown by solid source molecular beam epitaxy Yoon, S. F.; Mah, K. W.; Zheng, H. Q. Microelectronics Journal, Vol. 31, Issue 1 https://doi.org/10.1016/S0026-2692(99)00085-3	journal	January 2000
Minority‐carrier mobility in p ‐type GaAs Walukiewicz, W.; Lagowski, J.; Jastrzebski, L. Journal of Applied Physics, Vol. 50, Issue 7 https://doi.org/10.1063/1.325602	journal	July 1979
Electronic properties of InGaP grown by solid‐source molecular‐beam epitaxy with a GaP decomposition source Shitara, Tomoya; Eberl, Karl Applied Physics Letters, Vol. 65, Issue 3 https://doi.org/10.1063/1.112373	journal	July 1994
Magnetoluminescence study on the effective mass anisotropy of CuPtB-ordered GaInP2 alloys Ernst, P.; Zhang, Yong; Driessen, F. A. J. M. Journal of Applied Physics, Vol. 81, Issue 6 https://doi.org/10.1063/1.363938	journal	March 1997
Temperature dependence of diffusion length, lifetime and minority electron mobility in GaInP Schultes, F. J.; Christian, T.; Jones-Albertus, R. Applied Physics Letters, Vol. 103, Issue 24 https://doi.org/10.1063/1.4847635	journal	December 2013
Naturally formed In _x Al _{1− x} As/In _y Al _{1− y} As vertical superlattices Jun, Sung Won; Seong, Tae‐Yeon; Lee, J. H. Applied Physics Letters, Vol. 68, Issue 24 https://doi.org/10.1063/1.115787	journal	June 1996
Sb enhancement of lateral superlattice formation in GaInP Fetzer, C. M.; Lee, R. T.; Jun, S. W. Applied Physics Letters, Vol. 78, Issue 10 https://doi.org/10.1063/1.1350424	journal	March 2001
Spontaneous Lateral Composition Modulation in III-V Semiconductor Alloys Millunchick, J. Mirecki; Twesten, R. D.; Lee, S. R. MRS Bulletin, Vol. 22, Issue 7 https://doi.org/10.1557/S088376940003339X	journal	July 1997
Physics of Semiconductor Devices Sze, S. M.; Ng, Kwok K. https://doi.org/10.1002/0470068329	book	January 2007
Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures Wang, Y. Q.; Wang, Z. L.; Brown, T. Journal of Electronic Materials, Vol. 29, Issue 12 https://doi.org/10.1007/s11664-000-0121-5	journal	December 2000
Observation of large optical anisotropy and valence band splitting in AlInAs self-assembled lateral quantum wells Francoeur, S.; Hanna, M. C.; Norman, A. G. Applied Physics Letters, Vol. 80, Issue 2 https://doi.org/10.1063/1.1432754	journal	January 2002
Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP Haegel, N. M.; Mills, T. J.; Talmadge, M. Journal of Applied Physics, Vol. 105, Issue 2 https://doi.org/10.1063/1.3068196	journal	January 2009
Optical anisotropy and spin polarization in ordered GaInP Wei, Su‐Huai; Zunger, Alex Applied Physics Letters, Vol. 64, Issue 13 https://doi.org/10.1063/1.111828	journal	March 1994
Electron mobility in In0.5Ga0.5P Nag, B. R.; Das, Madhumita Journal of Applied Physics, Vol. 83, Issue 11 https://doi.org/10.1063/1.367446	journal	June 1998
Cation site ordering and conduction electron scattering in GaInP ₂ Friedman, D. J.; Kibbler, A. E.; Olson, J. M. Applied Physics Letters, Vol. 59, Issue 23 https://doi.org/10.1063/1.105823	journal	December 1991

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