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Title: Electronic properties of tantalum pentoxide polymorphs from first-principles calculations

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4901939· OSTI ID:1224307
 [1]; ORCiD logo [2];  [3]
  1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor 48109, USA, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor 48109, USA
  2. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor 48109, USA
  3. Department of Materials Science and Engineering, University of Michigan, Ann Arbor 48109, USA

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1224307
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 105 Journal Issue: 20; ISSN 0003-6951
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 16 works
Citation information provided by
Web of Science

References (37)

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Defect dominated charge transport in amorphous Ta2O5 thin films journal July 2000
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Maximally localized Wannier functions: Theory and applications journal October 2012
Novel Delta-Ta 2 O 5 Structure Obtained from DFT Calculations journal June 2014
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Extended x‐ray absorption fine structure analysis of the difference in local structure of tantalum oxide capacitor films produced by various annealing methods journal April 1995
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Material constants of new piezoelectric Ta 2 O 5 thin films journal July 1990
Rietveld analysis of X-ray diffraction pattern from β-Ta2O5 oxide journal May 2002
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Surface Acoustic Wave Properties of Amorphous Ta 2 O 5 and Nb 2 O 5 Thin Films Prepared by Radio Frequency Sputtering journal July 2012
Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications journal May 1998
Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium journal May 1994
Structural systematics in the binary system Ta2O5–WO3. V. The structure of the low-temperature form of tantalum oxide L-Ta2O5 journal May 1971
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Electronic structures of oxygen-deficient Ta 2 O 5 journal April 2013
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Unravelling the interplay of crystal structure and electronic band structure of tantalum oxide (Ta 2 O 5 ) journal January 2013
Electronic structure and charge transport properties of amorphous Ta2O5 films journal May 2008
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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures journal July 2011
First-principles simulations on bulk Ta2O5 and Cu/Ta2O5/Pt heterojunction: Electronic structures and transport properties journal November 2009
First-principles studies of Ta 2 O 5 polymorphs journal April 2011
Hidden Structural Order in Orthorhombic Ta 2 O 5 journal June 2013
Complementary resistive switching in tantalum oxide-based resistive memory devices journal May 2012
Electronic structure and stability of low symmetry Ta 2 O 5 polymorphs : Electronic structure and stability of low symmetry Ta journal May 2014
An X-Ray Investigation of the Tantalum-Oxygen System. journal January 1954

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