Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

Park, Helen Hejin; Jayaraman, Ashwin; Heasley, Rachel; Yang, Chuanxi; Hartle, Lauren; Mankad, Ravin; Haight, Richard; Mitzi, David B.; Gunawan, Oki; Gordon, Roy G.

doi:10.1063/1.4901899

Title: Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

Journal Article · Mon Nov 17 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4901899· OSTI ID:1224302

Park, Helen Hejin ^[1];

^[1]; Heasley, Rachel ^[1]; Yang, Chuanxi ^[1]; Hartle, Lauren ^[1];

^[2]; Haight, Richard ^[2]; Mitzi, David B. ^[3]; Gunawan, Oki ^[2]; Gordon, Roy G. ^[1]

Harvard University, Cambridge, Massachusetts 02138, USA
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA, Duke University, Durham, North Carolina 27708, USA

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Sponsoring Organization:: USDOE

OSTI ID:: 1224302

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 105 Journal Issue: 20; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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References (21)

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Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency Wang, Wei; Winkler, Mark T.; Gunawan, Oki Advanced Energy Materials, Vol. 4, Issue 7, Article No. 1301465 https://doi.org/10.1002/aenm.201301465	journal	November 2013
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Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells Sun, Leizhi; Haight, Richard; Sinsermsuksakul, Prasert Applied Physics Letters, Vol. 103, Issue 18 https://doi.org/10.1063/1.4821433	journal	October 2013
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Cd-free buffer layer materials on Cu ₂ ZnSn(S _x Se _1−x ) ₄ : Band alignments with ZnO, ZnS, and In ₂ S ₃ Barkhouse, D. Aaron R.; Haight, Richard; Sakai, Noriyuki Applied Physics Letters, Vol. 100, Issue 19 https://doi.org/10.1063/1.4714737	journal	May 2012
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