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Title: Method of forming contacts for a back-contact solar cell

Patent ·
OSTI ID:1223691

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Research Organization:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07GO17043
Assignee:
SunPower Corporation (San Jose, CA)
Patent Number(s):
9,166,079
Application Number:
14/302,254
OSTI ID:
1223691
Resource Relation:
Patent File Date: 2014 Jun 11
Country of Publication:
United States
Language:
English

References (9)

Back side contact solar cell with doped polysilicon regions patent December 2008
Trench process and structure for backside contact solar cells with polysilicon doped regions patent October 2010
Back side contact solar cell structures and fabrication processes patent October 2010
Method of forming contacts for a back-contact solar cell patent July 2013
Solar cell and method for fabricating the same patent-application October 2002
Process and fabrication methods for emitter wrap through back contact solar cells patent-application March 2006
Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells patent-application February 2008
Transgenic monocot plants encoding beta-glucosidase and xylanase patent-application August 2009
Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions patent-application December 2009

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Related Subjects

14 SOLAR ENERGY