Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment

Chang, Alexander S.; Zech, Eric S.; Kim, Tae Wook; Lin, Y. H.; Mawst, L. J.; Goldman, Rachel S

doi:10.1063/1.4896781

Title: Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment

Journal Article · Mon Oct 06 00:00:00 EDT 2014 · Appl. Phys. Lett.

DOI:https://doi.org/10.1063/1.4896781· OSTI ID:1168363

Chang, Alexander S.; Zech, Eric S.; Kim, Tae Wook; Lin, Y. H.; Mawst, L. J.; Goldman, Rachel S

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0000957; FG02-06ER46339

OSTI ID:: 1168363

Alternate ID(s):: OSTI ID: 1223051

Journal Information:: Appl. Phys. Lett., Vol. 105; Related Information: CSTEC partners with University of Michigan (lead); Kent State University

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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References (17)

Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy Kitatani, Takeshi; Kondow, Masahiko; Kikawa, Takeshi Japanese Journal of Applied Physics, Vol. 38, Issue Part 1, No. 9A https://doi.org/10.1143/JJAP.38.5003	journal	September 1999
Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures Sun, B. Q.; Jiang, D. S.; Luo, X. D. Applied Physics Letters, Vol. 76, Issue 20 https://doi.org/10.1063/1.126498	journal	May 2000
Band offset of InGaAs(N)∕GaAs interfaces from first principles Komsa, Hannu-Pekka; Arola, Eero; Rantala, Tapio T. Applied Physics Letters, Vol. 92, Issue 26 https://doi.org/10.1063/1.2936074	journal	June 2008
A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers Miyamoto, T.; Takeuchi, K.; Koyama, F. IEEE Photonics Technology Letters, Vol. 9, Issue 11 https://doi.org/10.1109/68.634704	journal	November 1997
Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen Kurtz, Steven R.; Allerman, A. A.; Seager, C. H. Applied Physics Letters, Vol. 77, Issue 3 https://doi.org/10.1063/1.126989	journal	July 2000
Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells Kudrawiec, R.; Yuen, H. B.; Bank, S. R. Journal of Applied Physics, Vol. 102, Issue 11 https://doi.org/10.1063/1.2817258	journal	December 2007
Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates Gönül, Beşire; Köksal, Koray; Bakır, Ebru Physica E: Low-dimensional Systems and Nanostructures, Vol. 31, Issue 2 https://doi.org/10.1016/j.physe.2005.11.007	journal	March 2006
Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications Harris, James S.; Kudrawiec, R.; Yuen, H. B. physica status solidi (b), Vol. 244, Issue 8 https://doi.org/10.1002/pssb.200675620	journal	August 2007
Band gap discontinuity in Ga0.9In0.1N0.027As0.973−xSbx∕GaAs single quantum wells with 0⩽x<0.06 studied by contactless electroreflectance spectroscopy Kudrawiec, R.; Motyka, M.; Gladysiewicz, M. Applied Physics Letters, Vol. 88, Issue 22 https://doi.org/10.1063/1.2208949	journal	May 2006
Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy Jackrel, David B.; Bank, Seth R.; Yuen, Homan B. Journal of Applied Physics, Vol. 101, Issue 11 https://doi.org/10.1063/1.2744490	journal	June 2007
Effect of on band alignment of compressively strained Ga1−xInxNy As1−y−zSbz/GaAs quantum well structures Aissat, A.; Nacer, S.; Seghilani, M. Physica E: Low-dimensional Systems and Nanostructures, Vol. 43, Issue 1 https://doi.org/10.1016/j.physe.2010.06.016	journal	November 2010
Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy Kim, T. W.; Garrod, T. J.; Kim, K. Applied Physics Letters, Vol. 100, Issue 12 https://doi.org/10.1063/1.3693160	journal	March 2012
Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications Garrod, T. J.; Kirch, J.; Dudley, P. Journal of Crystal Growth, Vol. 315, Issue 1 https://doi.org/10.1016/j.jcrysgro.2010.08.010	journal	January 2011
Surface roughness development during sputtering of GaAs and InP: Evidence for the role of surface diffusion in ripple formation and sputter cone development MacLaren, S. W.; Baker, J. E.; Finnegan, N. L. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, Issue 3 https://doi.org/10.1116/1.578173	journal	May 1992
Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs Hopstaken, M. J. P.; Gordon, M. S.; Pfeiffer, D. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 6 https://doi.org/10.1116/1.3514117	journal	November 2010
Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets Zech, E. S.; Chang, A. S.; Martin, A. J. Applied Physics Letters, Vol. 103, Issue 8 https://doi.org/10.1063/1.4818270	journal	August 2013
Nearest-neighbor distributions in ${Ga}_{1 - x} {In}_{x} N_{y} {As}_{1 - y}$ and ${Ga}_{1 - x} {In}_{x} N_{y} {As}_{1 - y - z} {Sb}_{z}$ thin films upon annealing Lordi, Vincenzo; Yuen, Homan B.; Bank, Seth R. Physical Review B, Vol. 71, Issue 12 https://doi.org/10.1103/PhysRevB.71.125309	journal	March 2005

Cited By (3)

Formation and properties of InGaN QDs: Influence of substrates Chang, A. S.; Walrath, J. C.; Frost, T. Applied Physics Letters, Vol. 114, Issue 6 https://doi.org/10.1063/1.5053856	journal	February 2019
Intrinsic point defects and the $n$ - and $p$ -type dopability of the narrow gap semiconductors GaSb and InSb Buckeridge, J.; Veal, T. D.; Catlow, C. R. A. Physical Review B, Vol. 100, Issue 3 https://doi.org/10.1103/physrevb.100.035207	journal	July 2019
Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb Buckeridge, J.; Veal, T. D.; Catlow, C. R. A. arXiv https://doi.org/10.48550/arxiv.1907.13063	text	January 2019

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Title: Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment

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