Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Li, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Dupuis, Russell D.; Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.; Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael

doi:10.1063/1.4897527

Title: Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Journal Article · Wed Oct 08 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4897527· OSTI ID:1223050

Li, Xiao-Hang ^[1]; Detchprohm, Theeradetch ^[1]; Kao, Tsung-Ting ^[1]; Satter, Md. Mahbub ^[1]; Shen, Shyh-Chiang ^[1]; Douglas Yoder, P. ^[1]; Dupuis, Russell D. ^[1]; Wang, Shuo ^[2]; Wei, Yong O. ^[2]; Xie, Hongen ^[2]; Fischer, Alec M. ^[2]; Ponce, Fernando A. ^[2]; Wernicke, Tim ^[3]; Reich, Christoph ^[3]; Martens, Martin ^[3]; Kneissl, Michael ^[3]

Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA
Technical University of Berlin, Institute for Solid State Physics, Berlin D-10623, Germany

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Sponsoring Organization:: USDOE

Grant/Contract Number:: FC26-08NT01580

OSTI ID:: 1223050

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 105 Journal Issue: 14; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 72 works

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References (21)

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