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Title: Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells

This project “Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells”, completed by the Institute of Energy Conversion (IEC) at the University of Delaware in collaboration with the Department of Chemical Engineering at the University of Florida, developed the fundamental understanding and technology to increase module efficiency and improve the manufacturability of Cu(InGa)(SeS)2 films using the precursor reaction approach currently being developed by a number of companies. Key results included: (1) development of a three-step H2Se/Ar/H2S reaction process to control Ga distribution through the film and minimizes back contact MoSe2 formation; (2) Ag-alloying to improve precursor homogeneity by avoiding In phase agglomeration, faster reaction and improved adhesion to allow wider reaction process window; (3) addition of Sb, Bi, and Te interlayers at the Mo/precursor junction to produce more uniform precursor morphology and improve adhesion with reduced void formation in reacted films; (4) a precursor structure containing Se and a reaction process to reduce processing time to 5 minutes and eliminate H2Se usage, thereby increasing throughput and reducing costs. All these results were supported by detailed characterization of the film growth, reaction pathways, thermodynamic assessment and device behavior.
  1. Univ. of Delaware, Newark, DE (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
DE-EE0005407 Final Report
DOE Contract Number:
Resource Type:
Technical Report
Research Org:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Contributing Orgs:
Univ. of Florida, Gainesville, FL (United States)
Country of Publication:
United States
25 ENERGY STORAGE Thin Film Solar Cells; CIGS; Precursor Reaction; Selenization; Chalcopyrite; Adhesion