skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Development of a MEMS dual-axis differential capacitance floating element shear stress sensor

Technical Report ·
DOI:https://doi.org/10.2172/1222985· OSTI ID:1222985
 [1];  [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

A single-axis MEMS wall shear stress sensor with differential capacitive transduction method is produced. Using a synchronous modulation and demodulation interface circuit, the system is capable of making real time measurements of both mean and fluctuating wall shear stress. A sensitivity of 3.44 mV/Pa is achieved, with linearity in response demonstrated up to testing limit of 2 Pa. Minimum detectable signals of 340 μPa at 100 Hz and 120 μPa at 1 kHz are indicated, with a resonance of 3.5 kHz. Multiple full scale wind tunnel tests are performed, producing spectral measurements of turbulent boundary layers in wind speeds ranging up to 0.5 Ma (18 Pa of mean wall shear stress). The compact packaging allows for minimally invasive installation, and has proven relatively robust over multiple testing events. Temperature sensitivity, likely due to poor CTE matching of packaged materials, is an ongoing concern being addressed. These successes are being directly leveraged into a development plan for a dual-axis wall shear stress sensor, capable of producing true vector estimates at the wall.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1222985
Report Number(s):
SAND2015-8414; 607292
Country of Publication:
United States
Language:
English

Similar Records

High-Temperature Sapphire Pressure Sensors for Harsh Environments
Technical Report · Fri Nov 30 00:00:00 EST 2018 · OSTI ID:1222985

MEMS capacitive wall shear stress vector measurement system
Patent · Tue Jan 14 00:00:00 EST 2020 · OSTI ID:1222985

Thin Silicon MEMS Contact-Stress Sensor
Conference · Mon Dec 07 00:00:00 EST 2009 · OSTI ID:1222985

Related Subjects