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Title: Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior; Article No. 044008

Authors:
; ; ;
Publication Date:
OSTI Identifier:
1220761
Report Number(s):
NREL/JA-5K00-64431
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Applied; Journal Volume: 3; Journal Issue: 4
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Contributing Orgs:
Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE