Highly Stable Two-Dimensional Silicon Phosphides: Different Stoichiometries and Exotic Electronic Properties; Article No. 121401(R)

Huang, B.; Zhuang, H. L.; Yoon, M.; Sumpter, B. G.; Wei, S. H.

doi:10.1103/PhysRevB.91.121401

Title: Highly Stable Two-Dimensional Silicon Phosphides: Different Stoichiometries and Exotic Electronic Properties; Article No. 121401(R)

Journal Article · Sun Mar 15 00:00:00 EDT 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.91.121401· OSTI ID:1220735

Huang, B.; Zhuang, H. L.; Yoon, M.; Sumpter, B. G.; Wei, S. H.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF); National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Contributing Organization:: Oak Ridge National Laboratory, Oak Ridge, Tennessee

OSTI ID:: 1220735

Report Number(s):: NREL/JA-5K00-64155

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Vol. 91, Issue 12

Country of Publication:: United States

Language:: English

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Two-dimensional silicon phosphide: low effective mass and direct band gap for future devices applications Kansara, Shivam; Bhuyan, Prabal Dev; Sonvane, Yogesh Journal of Materials Science, Vol. 54, Issue 18 https://doi.org/10.1007/s10853-019-03753-9	journal	June 2019
Controllable seeded flux growth and optoelectronic properties of bulk o-SiP crystals Li, Chunlong; Wang, Shanpeng; Zhang, Xixia CrystEngComm, Vol. 19, Issue 46 https://doi.org/10.1039/c7ce01676j	journal	January 2017
Half-metallicity in a honeycomb–kagome-lattice Mg ₃ C ₂ monolayer with carrier doping Pan, Hongzhe; Han, Yin; Li, Jianfu Physical Chemistry Chemical Physics, Vol. 20, Issue 20 https://doi.org/10.1039/c8cp01727a	journal	January 2018
The magnetism of 1T-MX ₂ (M = Zr, Hf; X = S, Se) monolayers by hole doping Xiang, Hui; Xu, Bo; Zhao, Weiqian RSC Advances, Vol. 9, Issue 24 https://doi.org/10.1039/c9ra01218d	journal	January 2019
The thermal and thermoelectric transport properties of SiSb, GeSb and SnSb monolayers Huang, H. H.; Fan, Xiaofeng; Singh, David J. Journal of Materials Chemistry C, Vol. 7, Issue 34 https://doi.org/10.1039/c9tc02876e	journal	January 2019
Exploration of the strain and thermoelectric properties of hexagonal SiX (X = N, P, As, Sb, and Bi) monolayers Somaiya, Radha N.; Sonvane, Yogesh Ashokbhai; Gupta, Sanjeev K. Physical Chemistry Chemical Physics, Vol. 22, Issue 7 https://doi.org/10.1039/d0cp00002g	journal	January 2020
Electronic, transport, and optical properties of atomically thin silicon phosphide: first-principles calculations Shu, Huabing Materials Research Express, Vol. 6, Issue 2 https://doi.org/10.1088/2053-1591/aaf211	journal	November 2018
Single-layer group IV-V and group V-IV-III-VI semiconductors: Structural stability, electronic structures, optical properties, and photocatalysis Lin, Jia-He; Zhang, Hong; Cheng, Xin-Lu Physical Review B, Vol. 96, Issue 3 https://doi.org/10.1103/physrevb.96.035438	journal	July 2017
Half-metallicity in honeycomb-kagome-lattice Mg3C2 monolayer with carrier doping Pan, Hongzhe; Han, Yin; Li, Jianfu arXiv https://doi.org/10.48550/arxiv.1712.08985	text	January 2017

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