Impact of Delta-Doping Position on Photoluminescence in Type-II InAs/GaAsSb Quantum Dots; Article No. 035006
Journal Article
·
· Semiconductor Science and Technology
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- Contributing Organization:
- Arizona State University, Tempe, Arizona
- OSTI ID:
- 1220724
- Report Number(s):
- NREL/JA-5J00-64055
- Journal Information:
- Semiconductor Science and Technology, Vol. 30, Issue 3
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots
Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots
Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels
Journal Article
·
Sat Nov 01 00:00:00 EDT 2014
· Journal of Crystal Growth
·
OSTI ID:1220724
+2 more
Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots
Journal Article
·
Sat Nov 01 00:00:00 EDT 2014
· Journal of Crystal Growth
·
OSTI ID:1220724
+2 more
Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels
Journal Article
·
Thu Nov 10 00:00:00 EST 2016
· Semiconductor Science and Technology
·
OSTI ID:1220724
+2 more