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Title: Impact of Delta-Doping Position on Photoluminescence in Type-II InAs/GaAsSb Quantum Dots; Article No. 035006

Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1220724
Report Number(s):
NREL/JA-5J00-64055
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductor Science and Technology; Journal Volume: 30; Journal Issue: 3
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Contributing Orgs:
Arizona State University, Tempe, Arizona
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE quantum dots; intermediate band solar cells; molecular beam epitaxy; InAs/GaAsSb; delta-doping