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Title: Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1214120
Report Number(s):
9,129,676
14/050,589
DOE Contract Number:
FC36-05GO15073
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Oct 10
Research Org:
William Marsh Rice University, Houston, TX (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY