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Title: Point defects in CdTe xSe 1-x crystals grown from a Te-rich solution for applications in detecting radiation

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.
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  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Korea Univ., Seoul (Korea)
  3. Fisk Univ., Nashville, TN (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 2166-532X; AMPADS; NN2001
Grant/Contract Number:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 4; Journal ID: ISSN 2166-532X
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
Country of Publication:
United States
36 MATERIALS SCIENCE; point defects characterization; cadmium telluride selenide (CdTeSe); radiation detectors; Traveling Heater Method (THM)