skip to main content

This content will become publicly available on December 6, 2014

Title: Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures

Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra-high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensions is highly novel. In this study, we will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon-on-insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices.
 [1] ;  [2] ;  [3] ;  [4] ;  [1]
  1. Univ. College London, London (United Kingdom)
  2. Ecole Polytechnique de Montreal, Montreal Quebec(Canada)
  3. Max Planck Institute of Microstructure Physics, Halle (Germany)
  4. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 26; Journal Issue: 46; Journal ID: ISSN 0935-9648
Research Org:
Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source.; Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States