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Title: Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography

Authors:
; ; ; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Dow
  2. (
Publication Date:
OSTI Identifier:
1212218
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Science Forum (Online); Journal Volume: 778
Research Org:
Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
ENGLISH