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Title: Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

Authors:
; ; ; ; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Dow
  2. (
Publication Date:
OSTI Identifier:
1212214
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Electronic Materials; Journal Volume: 44; Journal Issue: 5
Publisher:
Springer
Research Org:
Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)
Sponsoring Org:
INDUSTRY
Country of Publication:
United States
Language:
ENGLISH