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Title: Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching

Abstract

This paper presents the fabrication and characterization of a high-density multilayer stacked metal-insulator-metal (MIM) capacitor based on a novel process of depositing the MIM multilayer on pillars followed by polishing and selective etching steps to form a stacked capacitor with merely three photolithography steps. In this paper, the pillars were made of glass to prevent substrate loss, whereas an oxide-nitride-oxide dielectric was employed for lower leakage, better voltage/frequency linearity, and better stress compensation. MIM capacitors with six dielectric layers were successfully fabricated, yielding capacitance density of 3.8 fF/mu m(2), maximum capacitance of 2.47 nF, and linear and quadratic voltage coefficients of capacitance below 21.2 ppm/V and 2.31 ppm/V-2. The impedance was measured from 40 Hz to 3 GHz, and characterized by an analytically derived equivalent circuit model to verify the radio frequency applicability. The multilayer stacking-induced plate resistance mismatch and its effect on the equivalent series resistance (ESR) and effective capacitance was also investigated, which can be counteracted by a corrected metal thickness design. A low ESR of 800 m Omega was achieved, whereas the self-resonance frequency was >760 MHz, successfully demonstrating the feasibility of this method to scale up capacitance densities for high-quality-factor, high-frequency, and large-value MIM capacitors.

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1211417
DOE Contract Number:  
DE-AR0000105
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Electron Devices
Additional Journal Information:
Journal Volume: 61; Journal Issue: 7; Journal ID: ISSN 0018-9383
Country of Publication:
United States
Language:
English

Citation Formats

Tseng, VFG, and Xie, HK. Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching. United States: N. p., 2014. Web. doi:10.1109/TED.2014.2325491.
Tseng, VFG, & Xie, HK. Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching. United States. https://doi.org/10.1109/TED.2014.2325491
Tseng, VFG, and Xie, HK. 2014. "Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching". United States. https://doi.org/10.1109/TED.2014.2325491.
@article{osti_1211417,
title = {Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching},
author = {Tseng, VFG and Xie, HK},
abstractNote = {This paper presents the fabrication and characterization of a high-density multilayer stacked metal-insulator-metal (MIM) capacitor based on a novel process of depositing the MIM multilayer on pillars followed by polishing and selective etching steps to form a stacked capacitor with merely three photolithography steps. In this paper, the pillars were made of glass to prevent substrate loss, whereas an oxide-nitride-oxide dielectric was employed for lower leakage, better voltage/frequency linearity, and better stress compensation. MIM capacitors with six dielectric layers were successfully fabricated, yielding capacitance density of 3.8 fF/mu m(2), maximum capacitance of 2.47 nF, and linear and quadratic voltage coefficients of capacitance below 21.2 ppm/V and 2.31 ppm/V-2. The impedance was measured from 40 Hz to 3 GHz, and characterized by an analytically derived equivalent circuit model to verify the radio frequency applicability. The multilayer stacking-induced plate resistance mismatch and its effect on the equivalent series resistance (ESR) and effective capacitance was also investigated, which can be counteracted by a corrected metal thickness design. A low ESR of 800 m Omega was achieved, whereas the self-resonance frequency was >760 MHz, successfully demonstrating the feasibility of this method to scale up capacitance densities for high-quality-factor, high-frequency, and large-value MIM capacitors.},
doi = {10.1109/TED.2014.2325491},
url = {https://www.osti.gov/biblio/1211417}, journal = {IEEE Transactions on Electron Devices},
issn = {0018-9383},
number = 7,
volume = 61,
place = {United States},
year = {Tue Jul 01 00:00:00 EDT 2014},
month = {Tue Jul 01 00:00:00 EDT 2014}
}