Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4870284· OSTI ID:1211335

Bryan, Z; Bryan, I; Bobea, M; Hussey, L; Kirste, R; Sitar, Z; Collazo, R

High-resolution photoluminescence studies on m-plane (1-100) homoepitaxial films grown by metalorganic chemical vapor deposition on AlN revealed several sharp donor-bound exciton (DBX) peaks with a full width at half maximum as narrow as 550 mu eV. Power dependent photoluminescence distinguished DBXs tied to the Gamma(5) free exciton (FX) from those tied to the Gamma(1) FX. Both the n = 2 and n = 1 excited states of the Gamma(5) and Gamma(1) were resolved, giving binding energies of 52meV and 55 meV, respectively. The DBX transition at 6.006 eV was identified as originating from the neutral-donor-oxygen ((OX)-X-0). This assignment was based on secondary ion mass spectroscopy measurements, peak position with respect to the (SiX)-X-0, and deep defect luminescence peaks located at 3.25 eV and 3.58 eV. (C) 2014 AIP Publishing LLC.

• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• DOE Contract Number: DE-AR0000299
• OSTI ID: 1211335
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 13; ISSN 0021-8979
• Country of Publication: United States
• Language: English