Highly transparent ammonothermal bulk GaN substrates
Journal Article
·
· Journal of Crystal Growth
A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- DOE Contract Number:
- DE AR0000020
- OSTI ID:
- 1211057
- Journal Information:
- Journal of Crystal Growth, Vol. 403; ISSN 0022-0248
- Country of Publication:
- United States
- Language:
- English
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