Ionization-induced annealing of pre-existing defects in silicon carbide

Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H.; Chisholm, Matthew F.; Liu, Peng; Xue, Haizhou; Weber, William J.

doi:10.1038/ncomms9049

Title: Ionization-induced annealing of pre-existing defects in silicon carbide

Journal Article · Wed Aug 12 00:00:00 EDT 2015 · Nature Communications

DOI:https://doi.org/10.1038/ncomms9049· OSTI ID:1210134

Zhang, Yanwen ^[1];

^[2]; Pakarinen, Olli H. ^[3]; Chisholm, Matthew F. ^[2]; Liu, Peng ^[4]; Xue, Haizhou ^[5];

^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Helsinki (Finland). Dept. of Physics
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Shandong Univ., Jinan (China). Key Lab. of Particle Physics and Particle Irradiation (MOE), School of Physics
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering

A long-standing objective in materials research is to find innovative ways to remove preexisting damage and heal fabrication defects or environmentally induced defects in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power, high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization processes results in a highly localized thermal spike that can effectively heal preexisting defects and restore the structural order. This work reveals an innovative self-healing process using highly ionizing ions, and it describes a critical aspect to be considered in modeling SiC performance as either a functional or a structural material for device applications or high-radiation environments.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1210134

Journal Information:: Nature Communications, Vol. 6; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 109 works

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Title: Ionization-induced annealing of pre-existing defects in silicon carbide

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