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Title: Bi flux-dependent MBE growth of GaSbBi alloys

The incorporation of Bi in GaSb1-xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 μm h⁻¹). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0 < x ≤ 4.5%. The GaSbBi samples grown at the lowest Bi fluxes have smooth surfaces free of metallic droplets. The higher Bi flux samples have surface Bi droplets. The room temperature band gap of the GaSbBi epitaxial layers determined from optical absorption decreases linearly with increasing Bi content with a reduction of ~32 meV/%Bi.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [4] ; ORCiD logo [2]
  1. Univ. of Liverpool, Liverpool (United Kingdom). Stephenson Inst. for Renewable Energy and Dept. of Physics.
  2. Univ. of Liverpool, Liverpool (United Kingdom). Stephenson Inst. for Renewable Energy and Dept. of Physics.
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ of Hong Kong, Kowloon (Hong Kong). Dept. of Physics and Materials Science.
  4. Univ. of Warwick, Coventry (United Kingdom). Dept. of Chemistry.
Publication Date:
OSTI Identifier:
1209828
Grant/Contract Number:
AC02-05CH11231
Type:
Published Article
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 425; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
high resolution x-ray diffraction; molecular beam epitaxy; antimonides; bismuth compounds; gallium compounds; semiconducting III–V materials