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Title: Tellurium n-type doping of highly mismatched amorphous GaN 1-xAs x alloys in plasma-assisted molecular beam epitaxy

In this paper we report our study on n-type Te doping of amorphous GaN 1-xAs x layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN 1-xAs x layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN 1-xAs x layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN 1-xAs x layers has been determined.
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [4] ;  [3] ;  [1]
  1. Univ. of Nottingham (United Kingdom)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  4. US Army Research Lab., Adelphi, MD (United States)
  5. Univ. of Strathclyde, Glasgow (United Kingdom)
Publication Date:
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Published Article
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 404; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-06-22 11:58:13; Journal ID: ISSN 0022-0248
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
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