Simultaneous orientation and thickness mapping in transmission electron microscopy

Journal Article · Thu Dec 04 00:00:00 EST 2014 · Ultramicroscopy

DOI:https://doi.org/10.1016/j.ultramic.2014.11.034· OSTI ID:1208603

Tyutyunnikov, Dmitry ^[1]; Özdöl, V. Burak ^[2]; Koch, Christoph T. ^[1]

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1. Univ. of Ulm (Germany). Inst. for Experimental Physics
2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

In this paper we introduce an approach for simultaneous thickness and orientation mapping of crystalline samples by means of transmission electron microscopy. We show that local thickness and orientation values can be extracted from experimental dark-field (DF) image data acquired at different specimen tilts. The method has been implemented to automatically acquire the necessary data and then map thickness and crystal orientation for a given region of interest. We have applied this technique to a specimen prepared from a commercial semiconductor device, containing multiple 22 nm technology transistor structures. The performance and limitations of our method are discussed and compared to those of other techniques available.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE
• Grant/Contract Number: AC02-05CH11231
• OSTI ID: 1208603
• Journal Information: Ultramicroscopy, Vol. 150, Issue C; ISSN 0304-3991
• Publisher: Elsevier
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Orientation and thickness mapping
Transmission electron microscopy