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Title: Growth of graphene films from non-gaseous carbon sources

Patent ·
OSTI ID:1207317
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In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

Research Organization:
Rice Univ., Houston, TX (United States)
Sponsoring Organization:
USDOE
Assignee:
William Marsh Rice University (Houston, TX)
Patent Number(s):
9,096,437
Application Number:
13/561,889
OSTI ID:
1207317
Resource Relation:
Patent File Date: 2012 Jul 30
Country of Publication:
United States
Language:
English

References (15)

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High Throughput Preparation of Large Area Transparent Electrodes Using Non-Functionalized Graphene Nanoribbons journal February 2011
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Photovoltaic devices fabricated from nanostructured template patent-application May 2005
Fuel Cell and Fuel Cell Use Gas Diffusion Electrode patent-application September 2007
Graphene Film as Transparent and Electrically Conducting Material patent-application December 2007
Transparent Electrodes Formed of Metal Electrode Grids and Nanostructure Networks patent-application January 2008
Graphene Sheet and Method of Preparing the Same patent-application April 2009
Reduced Graphene Oxide Doped with Dopant, Thin Layer and Transparent Electrode patent-application June 2009
Reduced graphene oxide film patent-application September 2009
Graphene-based structure, method of suspending graphene membrane, and method of depositing material onto graphene membrane patent-application November 2009
Large-Area Single- and Few-Layer Graphene on Arbitrary Substrates patent-application January 2010

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