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Title: Growth of graphene films from non-gaseous carbon sources

In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1207317
Report Number(s):
9,096,437
13/561,889
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jul 30
Research Org:
William Marsh Rice University, Houston, TX (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY