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Title: High-resolution parallel-detection sensor array using piezo-phototronics effect

A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.
Authors:
;
Publication Date:
OSTI Identifier:
1202316
Report Number(s):
9,093,355
13/748,737
DOE Contract Number:
FG02-07ER46394
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jan 24
Research Org:
Georgia Tech Research Corporation, Atlanta, GA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 77 NANOSCIENCE AND NANOTECHNOLOGY