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Title: Electronic transport in two-dimensional high dielectric constant nanosystems

There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects. We find that the characteristic energy governing electronic transport scales logarithmically with either system size or electrostatic screening length depending on which one is shorter. Our results are relevant well beyond their immediate context, explaining, for example, recent experimental observations of logarithmic size dependence of electric conductivity of thin superconducting films in the critical vicinity of superconductor-insulator transition where a giant dielectric constant develops. Our findings mark a radical departure from the orthodox view of conductivity in 2D systems as a local characteristic of materials and establish its macroscopic global character as a generic property of high-dielectric constant 2D nanomaterials.
 [1] ;  [1] ;  [2] ;  [3]
  1. Univ. of Murcia (Spain). Dept. of Physics
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Novosibirsk State Univ. (Russian Federation); A. V. Rzhanov Inst. of Semiconductor Physics, Novosibirsk (Russian Federation)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
AC02-06CH11357; FIS2012-38206; 18857/EE/13; 12-02-00152
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 5; Journal ID: ISSN 2045-2322
Nature Publishing Group
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Murcia (Spain); Novosibirsk State Univ. (Russian Federation)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Intelligence Directorate (DGI) (Spain); Seneca Foundation (Spain); Russian Foundation for Basic Research (Russian Federation); Ministry of Education and Science (Russian Federation)
Country of Publication:
United States
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Electronic properties and materials; Surfaces, interfaces and thin films