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This content will become publicly available on September 30, 2014

Title: Effects of deposition termination on Cu2ZnSnSe4 device characteristics

We use co-evaporated Cu2ZnSnSe4 (CZTSe) to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Moreover, surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.
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  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Univ. of California, Los Angeles, CA (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0040-6090
Grant/Contract Number:
Published Article
Journal Name:
Thin Solid Films
Additional Journal Information:
Journal Volume: 582; Journal Issue: C; Related Information: Thin Solid Films; Journal ID: ISSN 0040-6090
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Copper zinc tin selenide; Copper zinc tin sulfide; Kesterite; Thin films; Surface; Hole barrier; Voltage; Solar cell