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Title: Defect-enhanced void filling and novel filled phases of open-structure skutterudites

Here, we report the design of novel filled CoSb3 skutterudite phases based on a combination of filling and Sb-substituted Ga/In defects. Ga/In doped skutterudite phases with Li-, Nd-, and Sm-fillings can be formed via this strategy, which can have relatively wider ranges of carrier concentration than other conventional filled skutterudite phases.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [3] ;  [4]
  1. Chinese Academy of Sciences (CAS), Beijing (China). Shanghai Inst. of Ceramics
  2. Chinese Academy of Sciences (CAS), Beijing (China). Shanghai Inst. of Ceramics; Shanghai Univ. (China). Materials Genome Inst.
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Univ. of Washington, Seattle, WA (United States). Materials Science and Engineering Dept.
Publication Date:
OSTI Identifier:
1195811
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
ChemComm
Additional Journal Information:
Journal Volume: 51; Journal Issue: 54; Journal ID: ISSN 1359-7345
Publisher:
Royal Society of Chemistry
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE