A New Slab Model Approach for Electronic Structure Calculation of Polar Semiconductor Surface
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October 1990 |
Composition dependence of photoluminescence of GaAs1−xBix alloys
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July 2009 |
GaAs (100)-(1X1) Structure Analysis from LEED Intensities
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January 2003 |
Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy
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January 2012 |
Ab initio study of the strain dependent thermodynamics of Bi doping in GaAs
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August 2012 |
Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi
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January 2013 |
Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix
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May 2008 |
Surface reconstructions on GaAs(001)
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July 2008 |
Photoluminescence investigation of GaAs1−xBix/GaAs heterostructures
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August 2012 |
From ultrasoft pseudopotentials to the projector augmented-wave method
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January 1999 |
Deep level defects in n-type GaAsBi and GaAs grown at low temperatures
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April 2013 |
Tensile Lattice Strain Accelerates Oxygen Surface Exchange and Diffusion in La 1– x Sr x CoO 3−δ Thin Films
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April 2013 |
Alloy catalysts designed from first principles
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October 2004 |
Low-misfit epilayer analyses using in situ wafer curvature measurements
- France, Ryan; Ptak, Aaron J.
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 3
https://doi.org/10.1116/1.3556974
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May 2011 |
Surface reconstruction stability and configurational disorder on Bi-terminated GaAs(001)
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January 2013 |
Band gap of GaAs1−xBix, 0<x<3.6%
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June 2003 |
Study of GaAsBi MOVPE growth on (100) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction
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April 2011 |
Arsenic Dimer Dynamics during MBE Growth: Theoretical Evidence for a Novel Chemisorption State of Molecules on GaAs Surfaces
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June 1999 |
Bismuth-stabilized and reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunneling microscopy study
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November 2008 |
A climbing image nudged elastic band method for finding saddle points and minimum energy paths
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December 2000 |
Structural properties of Bi-terminated GaAs(001) surface
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June 2006 |
Lattice dynamics study of bismuth III–V compounds
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September 2008 |
Real-Time Observation of Surface Bond Breaking with an X-ray Laser
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March 2013 |
Electronic Nature of Step-Edge Barriers against Adatom Descent on Transition-Metal Surfaces
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November 2008 |
Effect of Strain on the Reactivity of Metal Surfaces
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September 1998 |
Lattice strain effects on CO oxidation on Pt(111)
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January 2006 |
Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy
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May 2010 |
Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy
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September 2011 |
Covalent radii revisited
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January 2008 |
Anomalous Bismuth-Stabilized ( ) Reconstructions on GaAs(100) and InP(100) Surfaces
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February 2008 |
Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM
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February 2012 |
Strain effects on oxygen migration in perovskites
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January 2015 |
Growth of GaAs 1−x Bi x by molecular beam epitaxy: Trade-offs in optical and structural characteristics
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July 2014 |
Bismuth alloying in GaAs: a first-principles study
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October 2008 |
Electron spin relaxation in GaAs 1− x Bi x : Effects of spin-orbit tuning by Bi incorporation
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September 2012 |
Tuning of near-infrared luminescence of SrTiO3:Ni2+ thin films grown on piezoelectric PMN-PT via strain engineering
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July 2014 |
Surface analysis of different oriented GaAs substrates annealed under bismuth flow
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March 2007 |
In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy
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March 2011 |
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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October 1996 |
Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications
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February 2008 |
Electronic structure, growth, and structural and magnetic properties of magnetic semiconductor Fe/GaAs heterostructures
- Hirose, Shingo; Haneda, Shigeru; Yamaura, Masaaki
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 3
https://doi.org/10.1116/1.591392
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January 2000 |
Efficient kinematical simulation of reflection high-energy electron diffraction streak patterns for crystal surfaces
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October 2011 |
Molecular beam epitaxy growth of GaAsBi using As2 and As4
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March 2014 |
Growth of high Bi concentration GaAs 1−x Bi x by molecular beam epitaxy
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August 2012 |
Effect of thermal annealing on structural and optical properties of the GaAs 0.963 Bi 0.037 alloy
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November 2008 |
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix
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June 2008 |
Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy
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January 2006 |
Surface passivation method for semiconductor nanostructures
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April 2005 |
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
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June 2012 |
Adsorption and Dissociation of O 2 on Gold Surfaces: Effect of Steps and Strain
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September 2003 |
Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy
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October 2008 |
New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
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November 1998 |
AP-MOVPE of thin GaAs1−xBix alloys
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October 2006 |
Molecular beam epitaxy growth of GaAs1−xBix
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April 2003 |
light emitting diodes
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March 2009 |
Metalorganic vapor phase epitaxial growth of metastable GaAs1−xBix alloy
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April 2002 |
Characteristics of Semiconductor Alloy GaAs 1- x Bi x
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May 2002 |