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Title: Graphene-silicon layered structures on single-crystalline Ir(111) thin films

Epitaxial growth of graphene on transition metal crystals, such as Ru,⁽¹⁻³⁾ Ir,⁽⁴⁻⁶⁾ and Ni,⁽⁷⁾ provides large-area, uniform graphene layers with controllable defect density, which is crucial for practical applications in future devices. To decrease the high cost of single-crystalline metal bulks, single-crystalline metal films are strongly suggested as the substrates for epitaxial growth large-scale high-quality graphene.⁽⁸⁻¹⁰⁾ Moreover, in order to weaken the interactions of graphene with its metal host, which may result in a suppression of the intrinsic properties of graphene,⁽¹¹ ¹²⁾ the method of element intercalation of semiconductors at the interface between an epitaxial graphene layer and a transition metal substrate has been successfully realized.⁽¹³⁻¹⁶⁾
 [1] ;  [2] ;  [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [3] ;  [3] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Chinese Academy of Sciences (CAS), Beijing (China)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Univ. Augsburg, Augsburg (Germany)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 2196-7350; R&D Project: MA015MACA; KC0201010
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Volume: 2; Journal Issue: 3; Journal ID: ISSN 2196-7350
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; graphene-silicon; layered structures; interaction; Ir(111); single-crystalline thin films