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Title: Evidence for the temperature dependence of phase transformation behavior of silicon at nanoscale

This study uses the in-situ high-temperature nanoindentation coupled with electrical measurements to investigate the temperature dependence (25 to 200 C) of the phase transformation behavior of crystalline silicon (dc-Si) at the nanoscale. Along with in-situ indentation and electrical data, ex-situ characterizations such as Raman and cross-sectional transmission electron microscopy (XTEM) have been used to reveal the dominant mode of deformation under the indenter. In contrast to the previous studies, the dominant mode of deformation under the nanoindenter at elevated temperatures is not the dc-Si to metallic phase ( -Sn) transformation. Instead, XTEM images from 150 C indents reveal that the dominant mode of deformation is twinning along {111} planes. While the in-situ high-temperature electrical measurements show an increase in the current due to metallic phase formation up to 125 C, it is absent 150 C, revealing that the formation of the metallic phase is negligible in this regime. Thus, this work provides clear insight into the temperature dependent deformation mechanisms in dc-Si at the nanoscale.
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  1. Australian National Univ., Canberra, ACT (Australia)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal ID: ISSN 0021-8979
American Institute of Physics (AIP)
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States