Fractional quantum Hall effect at Landau level filling ν = 4/11
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Princeton Univ., Princeton, NJ (United States)
In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC04-94AL85000; AC04–94AL85000
- OSTI ID:
- 1184984
- Alternate ID(s):
- OSTI ID: 1181427
- Report Number(s):
- SAND-2014-20014J; PRBMDO; 547344; TRN: US1600810
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 91, Issue 4; ISSN 1098-0121
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 36 works
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