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Title: Underlying Mechanisms of Increased Efficiency in InGaN-Based Multiple Quantum Wells Emitting at 530-590 nm with AlGaN Interlayers.

Abstract not provided.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1183150
Report Number(s):
SAND2014-17728J
537540
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Crystal Growth
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English